Etch Selectivity For Nio Over Ga2o3 In Bcl3ar Discharges As A Function
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Selectivity For Dry Etching Of Ga2o3 Over Nio In 15cl25 Ar Discharges
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Inductively Coupled Plasma Etching Of Bulk Single Crystal Ga2o3
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Nio Etch Rate Plotted As A Function Of √25self Bias Indicating The
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Etch Rates For Nio And Ga2o3 As A Function Of 25 Dc Bias05 Which
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Figure 3 From Inductively Coupled Plasma Etching Of Bulk Single
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